Reliability of Al2O3-doped ZrO2 high-k dielectrics in three-dimensional stacked metal-insulator-metal capacitors

نویسندگان

  • Dayu Zhou
  • U. Schroeder
  • Jin Xu
  • J. Heitmann
  • G. Jegert
  • W. Weinreich
  • M. Kerber
  • S. Knebel
  • E. Erben
  • T. Mikolajick
چکیده

stacked metal-insulator-metal capacitors Dayu Zhou, U. Schroeder, Jin Xu, J. Heitmann, G. Jegert, W. Weinreich, M. Kerber, S. Knebel, E. Erben, and T. Mikolajick NaMLab gGmbH, Noethnitzer Str. 64, 01187 Dresden, Germany Fraunhofer Center Nanoelectronic Technologies, Koenigsbruecker Str. 180, 01099 Dresden, Germany Institute for Nanoelectronics, TU Munich, Arcisstr. 21, 80333 Munich, Germany Infineon Technologies AG, Otto-Hahn-Ring 6, 81739, Munich, Germany Chair of Nanoelectronic Materials, TU Dresden, Noethnitzerstrasse 64, 01187 Dresden, Germany

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

High-k Gate Dielectrics of Thin Films with its Technological Applications –A Review

High-k gate dielectrics are used to suppress excessive transistor gate leakage and power consumption could speed up the introduction of metal gates in complementary metal oxide semiconductor (CMOS) transistors. Many new oxides are being evaluated as gate dielectrics, such as Al2O3, Y2O3, La2O3, Gd2O3, HfO2, ZrO2, and TiO2, BaZrO3, ZrSiO4 and HfSiO4. Ru, RuO2 and SrRuO3 gate electrodes grown on ...

متن کامل

The Effect of Different Dielectric Materials in Designing High Performance Metal-Insulator-Metal (MIM) Capacitors

Received Jan 24, 2017 Revised Mar 30, 2017 Accepted Apr 15, 2017 A Metal-Insulator-Metal (MIM) capacitor with high capacitance, high breakdown voltage, and low leakage current is aspired so that the device can be applied in many electronic applications. The most significant factors that affect the MIM capacitor’s performance is the design and the dielectric materials used. In this study, MIM ca...

متن کامل

MIMC reliability and electrical behavior defined by a physical layer property of the dielectric

0026-2714/$ see front matter 2008 Elsevier Ltd. A doi:10.1016/j.microrel.2008.06.043 * Corresponding author. Tel.: +32 55 332343. E-mail address: [email protected] (J. Ackae Metal–insulator–metal capacitor (MIMC) reliability and electrical properties are defined by the TDDB lifetime, breakdown voltage and leakage current. In this article, the correlation is determined between these electri...

متن کامل

Step tunneling enhanced asymmetry in metal-insulator-insulator-metal (MIIM) diodes for rectenna applications

We combine nanolaminate bilayer insulator tunnel barriers (Al2O3/HfO2, HfO2/Al2O3, Al2O3/ZrO2) deposited via atomic layer deposition (ALD) with asymmetric work function metal electrodes to produce MIIM diodes with enhanced I-V asymmetry and non-linearity. We show that the improvements in MIIM devices are due to step tunneling rather than resonant tunneling. We also investigate conduction proces...

متن کامل

Polarization relaxation kinetics in ultrathin ferroelectric capacitors

Related Articles Electrical measurements of dielectric nonlinearities in ferroelectric bilayer thin films J. Appl. Phys. 113, 074104 (2013) Ultraviolet to near infrared response of optically sensitive nonvolatile memories based on platinum nano-particles and high-k dielectrics on a silicon on insulator substrate J. Appl. Phys. 113, 074503 (2013) High energy density nanocomposite capacitors usin...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2010